Effect of Temperature on the Iron Sulphur Ratio of Pyrite Deposited by Aerosol Assisted Chemical Vapour Deposition Method

Christian Nweze *

Department of Physics and Industrial Physics, Nnamdi Azikiwe University, P.M.B 5025, Awka, Anambra State, Nigeria

Masood Akhtar

School of Chemistry and Materials, University of Manchester, England, UK

Mohammad Azad Malik

School of Chemistry and Materials, University of Manchester, England, UK

Paul O’Brien

School of Chemistry and Materials, University of Manchester, England, UK

Stella Ezeonu

Department of Physics and Industrial Physics, Nnamdi Azikiwe University, P.M.B 5025, Awka, Anambra State, Nigeria

*Author to whom correspondence should be addressed.


Abstract

Pyrite semiconducting film was deposited on a glass substrate from the single source precursor (Fe (S2CN(Et)2)3) by Aerosol Assisted Chemical Vapour Deposition (AACVD). The p-XRD pattern of the deposited films shows that pure pyrite was deposited at 300°C whereas mixture of pyrite and marcasite was deposited at 350°C, 400°C and 450°C. EDX analysis shows that semiconducting pyrite was deposited at 300°C and 350°C, whereas metallic pyrite was deposited at 400°C and 450°C.

 

Keywords: EDX, XRD, SEM, semiconducting pyrite, metallic pyrite, AACVD


How to Cite

Nweze, Christian, Masood Akhtar, Mohammad Azad Malik, Paul O’Brien, and Stella Ezeonu. 2014. “Effect of Temperature on the Iron Sulphur Ratio of Pyrite Deposited by Aerosol Assisted Chemical Vapour Deposition Method”. Physical Science International Journal 5 (2):115-22. https://doi.org/10.9734/PSIJ/2015/12924.