Multi-phonon Raman Scattering in GaAs/Al0.28Ga0.72As Super-lattice

Cheng Xing-Kui *

Institute of Physics, Shandong University, Jinan 250100, China

Zhou Jun-Ming

Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

Huang Qi

Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

Yan Xun-Ling

Institute of Physics, Liaocheng University, 252000, China

*Author to whom correspondence should be addressed.


Abstract

Raman scattering measurement of GaAs/Al0.28Ga0.72As super-lattice has been performed by an incident light with the wave-vector perpendicular to super-lattice growth axis at room temperature. Several peaks in Raman Scattering spectrum are observed. Theoretical analysis shows that           the peak at 290 cm-1 may be caused by emission of a longitudinal optical phonon in GaAs/Al0.28Ga0.72As super-lattice, the peak at 584 cm-1 by emission of two ones, and the peak at 876 cm-1 by emission of three ones. The multi-phonon Raman scattering may be resulted from the folded optical phonons in super-lattices.

 

Keywords: Multi-phonon Raman scattering, folded optical phonons, super-lattice


How to Cite

Xing-Kui, Cheng, Zhou Jun-Ming, Huang Qi, and Yan Xun-Ling. 2017. “Multi-Phonon Raman Scattering in GaAs/Al0.28Ga0.72As Super-Lattice”. Physical Science International Journal 16 (3):1-7. https://doi.org/10.9734/PSIJ/2017/37435.

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