Three-dimensional Modeling Study of the Effect of Irradiation on a Single-face Polycrystalline Silicon Photocell under Multispectral Illumination
Mayoro Dieye *
Department of Physic, Science Faculty, Semiconductor Optoelectronics Group (GOES), University Cheikh anta Diop of Dakar (UCAD), BP-5005, Senegal.
Nacire Mbengue
Department of Physic, Science Faculty, Semiconductor Optoelectronics Group (GOES), University Cheikh anta Diop of Dakar (UCAD), BP-5005, Senegal and Department of Physic, Science Faculty, Solar Energy Materials and Systems Laboratory (LASES), University Cheikh anta Diop of Dakar (UCAD), BP-5005, Senegal.
Awa Dieye
Department of Physic, Science Faculty, Semiconductor Optoelectronics Group (GOES), University Cheikh anta Diop of Dakar (UCAD), BP-5005, Senegal and Department of Physic, Science Faculty, Solar Energy Materials and Systems Laboratory (LASES), University Cheikh anta Diop of Dakar (UCAD), BP-5005, Senegal.
*Author to whom correspondence should be addressed.
Abstract
A three-dimensional modeling study of a polycrystalline silicon mono-facet photocell under multi-spectral illumination is presented highlighting the effect of irradiation energy (Φ) and damage coefficient (Kl) on the macroscopic parameters. Using the junction recombination rate Sf and the backside recombination rate (Sb) in a 3D modeling study, the continuity equation is solved. We determined the current density the current density and the photovoltage. This study takes into account the irradiation energy and the damage coefficient on the quality of the polycrystalline silicon photocell.
Keywords: Grain size, grain boundary recombination velocity, polycrystalline, solar cell, irradiation, current density, photovoltage