The Interdependence of the Kinematic and Intrinsic Parameters of a HIT Cell: The Effect of Charge Carrier Mobility
Ousmane Ngom *
Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal.
Amaky Badiane
Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal.
Modou Faye
Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal.
Cheikh Mbow
Department of Physics, Laboratory of Fluid Mechanics, Hydraulics and Transfers, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal.
Bassirou Ba
Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal.
*Author to whom correspondence should be addressed.
Abstract
This paper discusses the dependence of the kinematic and intrinsic parameters of a silicon heterojunction solar cell, highlighting mobility phenomena.
First, a three-dimensional schematic of a HIT (Heterojunctions with Intrinsic Thin layer) cell is established to highlight mobility phenomena at the texturized hydrogenated indium oxide ( ) contact layer and active layers where charge carriers move.
Next, mathematical equations linking the interacting physical parameters are developed, and the numerical resolution of these mathematical equations has led to results.
The discussion of these results is based on charge carrier transport, more specifically the photocurrent densities of free electrons and excitons, and their contribution in terms of the photovoltaic cell's energy production efficiency.
Keywords: Nuclear and geothermal energy, effect of charge carrier mobility, heterojunctions with intrinsic thin layer