Random Telegraph Signals Generated in Transistors Due to Gamma Ray Irradiation: Online Study of the Device Characteristics

P. Mohamed Aslam *

Department of Physics, SRBTM Govt. College, Koyilandi, India

M. M. Musthafa

Department of Physics University of Calicut, Kerala, India

Biju P. Thomas

Department of Radiation Oncology, Caritas Cancer Institute, Kottayam, India

K. R. Rajesh

Department of Radiation Oncology, Caritas Cancer Institute, Kottayam, India

*Author to whom correspondence should be addressed.


Abstract

Commercial transistors have been irradiated with photon of 6 MeV and15 MeV energies and the device characteristics were studied during irradiation process. Along with expected reduction in current gain due to charge carrier trapping and other effects, considerable amount of noise signals resulting from modulation of RTS also have been observed which was seen to be died out within 30 seconds after the irradiation. The possible source and the nature of noise signals were analyzed. The similarities between the low varying random signals with 1/f noise are discussed.  

 

Keywords: Random signals, displacement effect, space radiation effect


How to Cite

Mohamed Aslam, P., M. M. Musthafa, Biju P. Thomas, and K. R. Rajesh. 2014. “Random Telegraph Signals Generated in Transistors Due to Gamma Ray Irradiation: Online Study of the Device Characteristics”. Physical Science International Journal 4 (7):962-72. https://doi.org/10.9734/PSIJ/2014/8904.

Downloads

Download data is not yet available.