Effect of Gamma Radiation in Undoped SnO2 Thin Films
A. F. Maged *
Department of Solid State and Electron Accelerator, National Center for Radiation Research and Technology, (NCRRT), Atomic Energy Authority, P.O.Box 8029, Nasr City, Cairo, Egypt
L. A. Nada
Department of Solid State and Electron Accelerator, National Center for Radiation Research and Technology, (NCRRT), Atomic Energy Authority, P.O.Box 8029, Nasr City, Cairo, Egypt
M. Amin
Department of Physics, Faculty of Science, Cairo University, Giza, Egypt
*Author to whom correspondence should be addressed.
Abstract
This paper was reported on study the effect of gamma radiation on nanoporous SnO2 electrodes for dye-sensitized solar cells. Structural, optical and electrical properties were studied. The refractive index was decreased with the increase in gamma radiation. The resistivity of thin films was decreased about 40% with the increase of gamma radiation at 659 nm film thicknesses. The mobility and carrier concentration were increased with the increase of gamma dose at 659 nm film thickness.
Keywords: SnO2, semiconductors, thin film, radiation