Growth of CdS Nanoparticles to Fabricate Schottky Barrier

S. Saha

Department of Physics and Technophysics, Vidyasagar University, Midnapur, Paschim Medinipur, West Bengal, India

R. Bhattacharya *

Department of Physics and Technophysics, Vidyasagar University, Midnapur, Paschim Medinipur, West Bengal, India

T. K. Das

Department of Physics and Technophysics, Vidyasagar University, Midnapur, Paschim Medinipur, West Bengal, India

*Author to whom correspondence should be addressed.


Abstract

CdS nanoparticles have been grown by a simple cost effective chemical reduction method and a Schottky barrier of gold/ nano CdS is fabricated. The grown nanoparticles are structurally characterized by transmission electron microscopy and x ray diffraction. The optical properties of nano CdS is characterized by optical absorption, photoluminescence study. The band gap of the CdS nanoparticles is increased as compared to CdS bulk form.  Capacitance–voltage and current–voltage characteristics of gold / nano CdS Schottky barrier junction have been studied. It is found that these characteristics are influenced by surface or interface traps. The values of barrier height, ideality factor, donor concentration and series resistance are obtained from the reverse bias capacitance–voltage measurements.

 

Keywords: CdS nanoparticles, structural properties, optical properties, Au/n-CdS schottky barrier


How to Cite

Saha, S., R. Bhattacharya, and T. K. Das. 2015. “Growth of CdS Nanoparticles to Fabricate Schottky Barrier”. Physical Science International Journal 7 (2):90-96. https://doi.org/10.9734/PSIJ/2015/17116.

Downloads

Download data is not yet available.