Conversion Efficiency Optimization of All-inorganic Perovskite CsPbI\(_{3-x}\)Br\(_x\) Solar Cell with Cu\(_2\)O and SnO\(_2\) as Transport Layers
Alioune SOW *
Department of Physics, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta DIOP, Dakar, Senegal.
Saliou SECK
Department of Physics, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta DIOP, Dakar, Senegal.
Mamadou Salif MANE
Department of Physics, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta DIOP, Dakar, Senegal.
Modou FAYE
Department of Physics, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta DIOP, Dakar, Senegal.
Amadou NDIAYE
Department of Physics, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta DIOP, Dakar, Senegal.
Bachirou NDIAYE
Department of Physics, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta DIOP, Dakar, Senegal.
Babacar MBOW
Department of Physics, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta DIOP, Dakar, Senegal.
Cheikh SENE
Department of Physics, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta DIOP, Dakar, Senegal.
*Author to whom correspondence should be addressed.
Abstract
In this modelling study, carried out using SCAPS 1 D software, we optimized the conversion efficiency of our Al/SnO\(_2\)/CsPbI\(_{3-x}\)Br\(_x\)/Cu\(_2\)O/ITO structure device. The study reveals that CsPbI\(_{3-x}\) is the best absorber material that can be obtained (x ꞓ ℕ). from The study shows that the suitable values for the thickness of the hole (Cu\(_2\)O) and electron (SnO\(_2\)) transport layers are 1000 nm and 30 nm respectively. For the CsPbI\(_{3-x}\) absorber of the solar cell, a thickness of 1000 nm and a defect density of 10\(^{10}\) Cm\(^{-3}\) are required to give a conversion efficiency of 20.43% to the device. Fixing the ITO back contact energy at 4.7 eV leads to an optimization of the conversion efficiency of the solar cell which can reach up to 26.76 % giving our device one of the best conversion efficiencies.
Keywords: Modelling, CsPbI\(_{3-x}\)Br\(_x\), absorber, CsPbI\(_{3-x}\), material and conversion efficiency (PCE)