Metal Oxide Buffer Layer Thickness Influence on the Performance of Pentacene Thin Film Transistors

Zhe Sun

College of Physics and Microelectronics Sciences, Hunan University, Changsha, 410082, P. R. China

Wei Peng

College of Physics and Microelectronics Sciences, Hunan University, Changsha, 410082, P. R. China

Yaya Chen

College of Physics and Microelectronics Sciences, Hunan University, Changsha, 410082, P. R. China

Wei Hu *

College of Physics and Microelectronics Sciences, Hunan University, Changsha, 410082, P. R. China

*Author to whom correspondence should be addressed.


Abstract

High performance top contact organic thin-film transistors (TC OTFTs) with bilayer electrodes (MoO3/Au) are fabricated. The interface properties of metal electrodes with organic active layer have an important effect on the OTFTs performance. We demonstrate the MoO3 layer is working as a buffer layer which can lower the charge injection barrier and reduce the contact resistance, and study the devices characteristics changing with the buffer layer thickness. Comparing with conventional TC OTFTs, the organic transistor with 10nm buffer layer shows the highest performance with field-effect mobility increasing from 0.17 to 0.69 cm2/V·s, threshold voltage downshifts from –13 to –5.3 V, and the on/off current ratio is about 50 times higher.

 

Keywords: Organic thin-film transistor, pentacene, OTFT, MoO3, buffer layer


How to Cite

Sun, Zhe, Wei Peng, Yaya Chen, and Wei Hu. 2013. “Metal Oxide Buffer Layer Thickness Influence on the Performance of Pentacene Thin Film Transistors”. Physical Science International Journal 4 (1):51-57. https://journalpsij.com/index.php/PSIJ/article/view/142.

Downloads

Download data is not yet available.