Simulation Study of Circuit Performance of GAA Silicon Nanowire Transistor and DG MOSFET

Reza Hosseini *

Department of Electrical Engineering, Khoy Branch, Islamic Azad University, Khoy, Iran

Neda Teimuorzadeh

Department of Electrical Engineering, Khoy Branch, Islamic Azad University, Khoy, Iran

*Author to whom correspondence should be addressed.


Abstract

In this paper, electrical characteristics of Double Gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET) and that of Gate All Around Silicon Nanowire Transistor (GAA SNWT) were investigated. In particular, the effect of channel length was studied. Full quantum mechanical models theoretically are the most accurate way to study such ultrasmall nanodevices. Phenomenological quantum correction model, a calibrated 3D density gradient model, was adopted in this work. Furthermore, we presented the operations of associated CMOS inverter, which were investigated in terms of static power dissipation and propagation delay. We also compared the operation of GAA SNWT inverter with that of DG MOSFET. Simulated static power dissipation and propagation delay of the GAA SNWT inverter were found to be about 17nW and 14ps, respectively, compared with 10µW and 16ps achievable with DG MOSFET inverter.

 

Keywords: DG MOSFET, GAA SNWT, density gradient model, CMOS inverter


How to Cite

Hosseini, Reza, and Neda Teimuorzadeh. 2013. “Simulation Study of Circuit Performance of GAA Silicon Nanowire Transistor and DG MOSFET”. Physical Science International Journal 3 (4):568-76. https://journalpsij.com/index.php/PSIJ/article/view/178.

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