A Study of Thermal Spreading Resistance of Inhomogeneous Silicon Layer in Chip-Multiprocessor
Issue: 2013 - Volume 3 [Issue 4]
Faculty of Mechanical Engineering, Babol University of Technology, Iran
D. D. Ganji *
Department of Mechanical Engineering, Babol University of Technolog, Iran
*Author to whom correspondence should be addressed.
The phenomenon of thermal Spreading resistance takes places when two rough solids are brought into contact and heat flow is streamed across their asperities. The purpose of the present study is to investigate the heat conduction and thermal spreading resistance of Half-Spaces and semi-infinite Microchannels with Variable conductivity for both heat flux and temperature specified boundary conditions on the contact of silicon and heat sink material in Chip-Multiprocessor. The governing equation is expressed in cylindrical coordinates. A well-known technique (Kirchhoff transformation) is used to linearize the steady state nonlinear heat conduction equation of problem and equations are solved by deriving the analytical solution. Results are presented in contour plots that show the effects of various boundary conditions on the thermal spreading resistance, heat flow rate and temperature distribution.
Keywords: Thermal spreading resistance, heat conduction, kirchhoff transformation, inhomogeneous silicon