Physical Science International Journal

Electrical and Photoelectric Properties of Crystal InGaTe2

E. M. Gojayev *

Azerbaijan Technical University, H. Javid Ave. 25, Az-1073, Baku, Azerbaijan

A. G. Kazim-zade

Baku State University, Z. Khalilov Ave.23, Az-1148, Baku, Azerbaijan

V. M. Salmanov

Baku State University, Z. Khalilov Ave.23, Az-1148, Baku, Azerbaijan

A. G. Guseynov

Baku State University, Z. Khalilov Ave.23, Az-1148, Baku, Azerbaijan

U. S. Abdurahmanova

Azerbaijan Technical University, H. Javid Ave. 25, Az-1073, Baku, Azerbaijan

R. M. Mamedov

Baku State University, Z. Khalilov Ave.23, Az-1148, Baku, Azerbaijan

*Author to whom correspondence should be addressed.

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Abstract

The electroconductivity, photoconductivity and relaxation curves of the nonequilibrium photoconductivity in InGaTe₂  crystals under  incandescent lamp light sources and laser light have been experimentally investigated. It is shown that the optical absorption in the InGaTe₂  due to indirect and direct optical transitions, the band gap of 1.02 eV and 1.42 eV, respectively. Acceptor centers are found, at a depth of 0.203 eV and 0.801 eV. At high levels optical excitation in InGaTe₂  observed two-photon absorption. It was found that the nonequilibrium photoconductivity observed in InGaTe₂  crystals under the action of 1^st and 2^nd harmonic of neodymium laser radiation, due to the impurity, bipolar and the two-photon photoconductivity.

Keywords: Compound InGaTe2, indirect and direct optical transitions, non-linear optic properties, photoelectric properties

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